ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy

Publication date: 1 February 2016
Source:Journal of Crystal Growth, Volume 435
Author(s): Yuanchang Zhang, Kurt G. Eyink, Joseph Peoples, Krishnamurthy Mahalingam, Madelyn Hill, Larry Grazulis
ErAsSb nanoparticle (NP) growth is investigated on GaAs surface by molecular beam epitaxy. ErAsSb NP grown under Sb flux is compared to pure ErAs NP grown under As flux. It is found the incorporation of Sb is rather low in ErAsSb. However, ErAsSb NP exhibits very different structural and optical properties. ErAsSb NPs on GaAs preferentially elongates along the [1–10] direction with increasing deposition and growth temperature. The absorption peak for light polarized parallel to the long axis of the particles is found to occur at longer wavelengths than those for light polarized perpendicular to the long axis of the particles. The results can be attributed to Sb surfactant effect.



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