Source:Journal of Crystal Growth, Volume 439
Author(s): Umar Saleem, Hong Wang, David Peyrot, Aurélien Olivier, Jun Zhang, Philippe Coquet, Serene Lay Geok Ng
We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows a metal-free Vapor–Liquid–Solid (VLS) mechanism, further allowing a CMOS technology compatibility. The synthesis of nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.
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