X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Publication date: 1 April 2016
Source:Journal of Crystal Growth, Volume 439
Author(s): J.B. Rodriguez, K. Madiomanana, L. Cerutti, A. Castellano, E. Tournié
We report on the molecular beam epitaxy and characterization by X-ray diffraction techniques of GaSb layers grown on silicon substrates. AlSb and Al nucleation layers were used with different thicknesses and growth temperatures. Reciprocal space maps and a modified version of the Williamson-Hall analysis allowed for a characterization of the misfit dislocations properties. Finally, a post-growth annealing step is studied in order to further improve the material quality. Using this technique, a full-width-at-half-maximum of the GaSb peak of 235arcsec was obtained for a layer thickness of 1µm, which is comparable to the best results for GaAs or Ge on Si.



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