Comment on “Experimental study of the orientation dependence of indium incorporation in GaInN” [J. Cryst. Growth 433 (2016) 7–12]

Publication date: 1 July 2016
Source:Journal of Crystal Growth, Volume 445
Author(s): Morteza Monavarian
The authors of the title paper (J. Cryst. Growth 433 (2016) 7–12) reported on experimental comparison of indium incorporation efficiency in wide variety of orientations tilted from the basal plane toward a-plane (a-family planes) or m-plane (m-family planes) and some mixed planes. Despite a good investigation and useful information reported in this manuscript, some points of criticism, concerning the inclination angle calculations, optical characterizations of the layers, and the final conclusions are highlighted in this comment to consider.



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