Effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon

Publication date: 1 July 2016
Source:Journal of Crystal Growth, Volume 445
Author(s): Jin Xu, Yaochao Lv, Weibin Guo, Tingting Xie
The effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon has been investigated by means of Fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL) measurements, respectively. It was found that ramping from low temperature could promote the formation of oxygen precipitates in copper-contaminated Czochralski silicon and the lower the start ramping temperature was, the more oxygen precipitates formed. Moreover, the amount of precipitated oxygen atoms increased with copper contamination temperature. Through the investigation of 0.97eV PL line related with Cu–vacancy complex, it was revealed that a lower start ramping temperature led to a lower concentration of Cu–vacancy complex and the increase of the copper contamination temperature resulted in the decrease of concentration of Cu–vacancy complex.



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